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Gallium arsenide (GaAs) optics

Short Description:


Production capability: 1000-3000pcs per month

Payment : Paypal, Western Union, T/T

Shipping method: Express, Airfreight, Ocean freight


We can provide

·Competitive Prices

·Quality ISO:9001-2015 Certified

·ROHS Compliant

·Short lead time

·Standard size stock available

·Fast Prototyping

·Custom Optics Fabrication

·Quality assurance

·Warranty & After sales service


  • Transmisson graph: Gallium arsenide (GaAs)
  • Product Detail

    Product Tags

    Product Parameter

    Gallium arsenide (GaAs) crystals have good chemical stability, high hardness and strong resistance to harsh environments. It has good transmittance in the 2µm---14µm spectral range and is widely used in thermal infrared imaging systems, high-power CO2 laser optical systems and FLIR systems. GaAs is often used to replace zinc selenide (ZnSe) as an infrared lens or window material.

    Transmission wavelength

    1000nm---14000nm

    Density     (g cm-3)

    5.32 @300K

    Melting point   (℃)

    1238

    Dielectric constant static / hyperframes

    12.85/10.88 @ 300K

    Thermal Expansion Coefficient (1/℃)

    5.7*10-6 @300K

    Bulk modulus ( (Gpa)

    101.32

    Shear modulus (Gpa)

    55.66 @298K

    Thermal Conductivity   (J/k .m. s)

    55 @ 300K

    Specific Heat  (J/g .k)

    0.32

    Knoop Hardness (kg/mm2)

    731

    Apparent elastic limit   (Mpa)

    49.46

    Young’s Modulus       (Gpa)

    138.5 @298K

    Poisson’s Ratio

    0.31 @293K

    Debye temperature(k)

    360

    Band gap(ev)

    1.4

    absorption coefficient

    0.01 @ 2500nm—11000nm

    Thermo-optical coeffecient  ,dn/dT (1/k)

    160-120*10-6 @3000nm—12000nm


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